Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA3513-99F is composed by a three step digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch.
It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |