Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.
It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||