Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA3514-99F is composed by a two stage travelling wave amplifier followed by a four step digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||