Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA3511-99F is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Dynamic Range (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |