Advanced Information

ADVANCED INFORMATION

UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.

Your projects will benefit from our latest developments and up-to-date designs.

For more information, please contact your local sales responsible or send your demand to mktsales@ums-rf.com

45W GaN packaged power bar (AI2010)

UMS developed an unmatched power bar microwave transistor, dedicated to RF power applications up to 4 GHz. It consists of two CHK8101a99F power bars packaged together with individual access possible.

The applied GaN on SiC process is a space evaluated HEMT process with 0.50 µm gate length.

It is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.

 

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24GHz 1Tx 4Rx ISM SENSOR (AI2005)

UMS develops a 24GHz 1 Tx 4Rx is a multifunction chip which integrates a low phase noise VCO, Tx MPA, two double balanced mixer based Rx and a switchable prescaler. The circuit is controlled by SPI and monitored with power and temperature sensor. It is designed for signal generation and reception for ISM radar applications.

It is supplied in RoHS compliant SMD package.

 

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24GHz 4TX/2RX (AI2017)

UMS proposes a multifunction chip which integrates a low phase noise core VCO, four Tx MPA, two Gilbert based heterodyne Rx and, frequency calibration & loop prescalers. The circuit is fully SPI controlled and monitored with power and temperature sensors. It is designed for signal generation and reception for 24GHz radar applications.

 

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