Advanced Information

ADVANCED INFORMATION

UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.

Your projects will benefit from our latest developments and up-to-date designs.

For more information, please contact your local sales responsible or send your demand to mktsales@ums-rf.com

10W K-Band Doherty Amplifier (AI2203)

UMS develops the CHA8254-99F, a three-stage GaN Doherty Power Amplifier in the 17.3‑20.3GHz frequency band. This DPA typically provides 10W of output power associated with 31% of Power Added Efficiency. Thanks to Doherty architecture, it also provides 27% Power Added Efficiency at 6dB of input back-off (around 3dB of output back-off). The small signal gain exhibits more than 29dB. The overall power supply is 15V/225mA (quiescent current). Thanks to a low drain voltage biasing, the CHA8254-99F provides a junction temperature below 160°C even in saturation.

This circuit is a very versatile amplifier for high performance systems.

The circuit is dedicated to space applications and also well suited for a wide range of microwave applications and systems.

The part is developed on a robust 0.15µm gate length GaN-on-SiC HEMT process and is available as a bare die.

 

More information

24.5-30.5GHz High Power Front End (AI2016)

UMS develops a High Power Frond-End (HPFE) featuring Transmit and Receive paths combined with In/Out Switch. This circuit operates in the 24.25-30.5GHz bandwidth. It is specially designed for telecommunication radio links. It typically exhibits a Receiver gain of 18dB with a low noise figure of 3.2dB, a Transmit gain of 28dB with 31dBm saturated output power. It features good linearity with an ACPR of 36dBc @23dBm average Pout with 56MHz modulation bandwidth and 4QAM.

This HPFE is realized on mixed technologies 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs) - UMS proprietary technologies  - and provided in a cost effective plastic package. 

 

 

More information

15W Power Packaged Transistor(AI2110)

UMS has developed the CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication

The CHK8101-SYC is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.

The CHK8101-SYC is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.

 

More information

24GHz 4TX/2RX (AI2017)

UMS proposes a multifunction chip which integrates a low phase noise core VCO, four Tx MPA, two Gilbert based heterodyne Rx and, frequency calibration & loop prescalers. The circuit is fully SPI controlled and monitored with power and temperature sensors. It is designed for signal generation and reception for 24GHz radar applications.

 

More information

24GHz 1Tx 4Rx ISM SENSOR (AI2005)

UMS develops a 24GHz 1 Tx 4Rx is a multifunction chip which integrates a low phase noise VCO, Tx MPA, two double balanced mixer based Rx and a switchable prescaler. The circuit is controlled by SPI and monitored with power and temperature sensor. It is designed for signal generation and reception for ISM radar applications.

It is supplied in RoHS compliant SMD package.

 

More information

45W GaN packaged power bar (AI2010)

UMS developed an unmatched power bar microwave transistor, dedicated to RF power applications up to 4 GHz. It consists of two CHK8101a99F power bars packaged together with individual access possible.

The applied GaN on SiC process is a space evaluated HEMT process with 0.50 µm gate length.

It is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.

 

More information