UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.
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UMS develops a four stages High Power Amplifier operating between 37.5 and 41.5 GHz and providing more than 8W of saturated output power and 22% of power added efficiency.
The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7453-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA.
This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
The product is developed on a robust 0.15µm gate length space evaluated GaN on SiC HEMT process and is available as a bare die.
UMS proposes a multifunction chip which integrates a low phase noise core VCO, four Tx MPA, two Gilbert based heterodyne Rx and, frequency calibration & loop prescalers. The circuit is fully SPI controlled and monitored with power and temperature sensors. It is designed for signal generation and reception for 24GHz radar applications.
UMS develops a 24GHz 1 Tx 4Rx is a multifunction chip which integrates a low phase noise VCO, Tx MPA, two double balanced mixer based Rx and a switchable prescaler. The circuit is controlled by SPI and monitored with power and temperature sensor. It is designed for signal generation and reception for ISM radar applications.
It is supplied in RoHS compliant SMD package.