UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.
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The CHA6354-QQA is three stages monolithic GaN High Power Amplifier reaching 4W output power over 27.5-30GHz bandwidth. It includes a power detector and a switch at the output.
The circuit is manufactured on a robust GaN-on SiC HEMT technology and is available in standard surface mount 28Leads QFN 5x4.
The input and output are internallu matched to 50 Ohms and integrates ESD RF protection.
It is well suited for SatCom uplink and 5G applications.
UMS develops a four stages High Power Amplifier operating between 37.5 and 41.5 GHz and providing more than 8W of saturated output power and 22% of power added efficiency.
The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7453-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
UMS proposes a multifunction chip which integrates a low phase noise core VCO, four Tx MPA, two Gilbert based heterodyne Rx and, frequency calibration & loop prescalers. The circuit is fully SPI controlled and monitored with power and temperature sensors. It is designed for signal generation and reception for 24GHz radar applications.
UMS develops a 24GHz 1 Tx 4Rx is a multifunction chip which integrates a low phase noise VCO, Tx MPA, two double balanced mixer based Rx and a switchable prescaler. The circuit is controlled by SPI and monitored with power and temperature sensor. It is designed for signal generation and reception for ISM radar applications.
It is supplied in RoHS compliant SMD package.
UMS develops a four stages High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications