Advanced Information

ADVANCED INFORMATION

UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.

Your projects will benefit from our latest developments and up-to-date designs.

For more information, please contact your local sales responsible or send your demand to mktsales@ums-rf.com

X-band HPA (AI1908)

UMS develops a three stage GaN high power amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 37% of power added efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.5A (quiescent current).

This circuit is a very versatile amplifier for high performance systems.

The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems.

It is developed on a robust 0.25µm gate length GaN HEMT process and is available as a bare die.

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X-band Medium Power Amplifier (AI1807)

UMS develops a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 34% of Power Added Efficiency.

It is designed for a wide range of applications, from space and military to commercial communication systems.

The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package, compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006

 

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2-22GHz LNA with AGC (AI1713)

UMS has developed a distributed Low Noise Amplifier with adjustable gain control (AGC) in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from 2 to 22GHz.

It is designed for Space application and it is well suited a wide range of applications, such as electronic warfare, X-Ku Point to Point Radio, and test instrumentation. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate and air bridges.

It is also available both as a bare die, and in a standard surface mount 24 leads QFN6x6, all form compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006.

 

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15W GaN HPA (AI1612)

UMS proposes a surface mount packaged High Power Amplifier in the 8.5-10.5GHz frequency band. This HPA provides typically 17W of output power associated to 35% of power added efficiency. The small signal gain exhibits 24dB. The overall power supply is of 30V/0.68A (quiescent current).

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5.8GHz Transponder (AI1232)

The CHR2270-QAG is a reflective transponder operating at 5.8GHz for short and medium range automotive communication (DSRC), Electronic Traffic Control (ETC) and identification transponders. This product is designed using SiGe technology and features a very low power consumption which can result in 5 years battery life.

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