Datasheet Download| Reference | RF Bandwidth (GHz) | Small signal Gain (dB) | Power (W) | Associated Gain (dB) | P-1dB OUT (dBm) | PAE (%) | DC Bias | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band.
It is well suited for pulsed radar application.
The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology.
It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
| Reference | RF Bandwidth (GHz) | Small signal Gain (dB) | Power (W) | Associated Gain (dB) | P-1dB OUT (dBm) | PAE (%) | DC Bias | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||