Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6551-99Fis a three stage monolithic GaAs high power circuit producing 1.6 Watt output power.
This product is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for a wide range of applications: Space, military and automotive communication systems.
The circuit is manufactured with a pHEMT process, 0.15µm gate length.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||