Datasheet Download| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in ceramic metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|