Datasheet Download| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006
It is proposed in a bare die form and requires an external matching circuitry.
| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|