Datasheet Download| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
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The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in low cost plastic package providing low parasitic and low thermal resistance.
| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|