CHA7452-99F -35.5-40.5GHz High Power Amplifier

Function
 AMPLIFIER – HPA
Case
 Die
RF Bandwidth (GHz) min-max
 35.5 - 40.5
Gain (dB)
 29
P-1dB OUT (dBm)
 39.5
PAE (%)
 24
Bias (mA)
 290
Bias (V)
 20
Description

The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency.

The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation.

The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

It is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems.

Attachments

AMPLIFIER – HPA