Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency.
The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
It is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems.
Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |