Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA7250-QAB is a two stage monolithic GaN Power Amplifier exhibiting 10W saturated output power over 10-12.75GHz frequency range.
It features 37% Power Added Efficiency and a linear gain of 20dB.
The circuit is realized on 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) technology.
It is designed for Point To Point Radio and is provided on low cost SMD RoHS compliant plastic package.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||