Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth.
It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM).
The circuit is based on GaN technology; 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC).
It is a low cost plastic packaged designed for Point To Point Radio applications.
It is supplied in RoHS compliant SMD package.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||