Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6652-98F is a three stage monolithic GaAs High Power Amplifier circuit producing 2W output power. It integrates differential mode power detector at the output. Gain control up to 15dB is achievable thanks to gate voltage.
It is a field proven solution for Point to Point telecommunication systems. The circuit is highly linear and compatible with the last generation of Digital Pre-Distortion. Its versatile biasing condition helps to tune the performances.
The circuit is manufactured with an internal pHEMT space evaluated process, 0.15µm gate length.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||