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The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.
Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability.
The device shows a very high transconductance which leads to very high frequency and low noise performances.
It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Noise Figure (dB) | Case | |
|---|---|---|---|---|---|
| min | max | ||||