Datasheet Download| Reference | RF Bandwidth (GHz) | Small signal Gain (dB) | Power (W) | Associated Gain (dB) | P-1dB OUT (dBm) | PAE (%) | DC Bias | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.
It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.
The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems.
The part is proposed in low cost plastic package providing low parasitic and low thermal resistance. It is supplied in RoHS compliant SMD package.
| Reference | RF Bandwidth (GHz) | Small signal Gain (dB) | Power (W) | Associated Gain (dB) | P-1dB OUT (dBm) | PAE (%) | DC Bias | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||