CHK8201-SYA - 45W GaN Packaged Power Bar

Function
 GaN POWER TRANSISTOR
Operating Frequency (GHz)
 Up to 4
Glin (dB) @ Freq (GHz)
 22 @ 1.3
Saturated Power (W)
 45
PAE (%) @ Freq (GHz)
 55
Case
 Hermetic SMD
Description

The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as space and telecommunication

The CHK8101-SYC is developed on a 0.5µm gate length GaN on SiC HEMT process. It requires an external matching circuitry.

The CHK8101-SYC is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.

Attachments

GaN POWER TRANSISTOR