Datasheet Download| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
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The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as space and telecommunication
The CHK8101-SYC is developed on a 0.5µm gate length GaN on SiC HEMT process. It requires an external matching circuitry.
The CHK8101-SYC is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|