Datasheet Download| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
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The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare die form and requires an external matching circuitry.
| Reference | Glin (dB) @ Freq (GHz) | Operating Frequency (GHz) | Saturated Power (W) | PAE (%) @ Freq (GHz) | Bias (mA) | Bias (V) | Case |
|---|---|---|---|---|---|---|---|