Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||