CHA7455-99F: 9W 39-43.5GHz High Power Amplifier

Function
 AMPLIFIER – HPA
Reference produit
 CHA7455-99F
RF Bandwidth (GHz) min-max
 39 - 43.5
Gain (dB)
 24
IP3 (dBm)
 
P-1dB OUT (dBm)
 39.5
Sat. Output Power (dBm)
 39.5
PAE (%)
 25
Bias (mA)
 240
Bias (V)
 20
Case
 Die
Description
 The CHA7455-99F is a four stages High Power Amplifier operating between 39 and 43.5GHz and providing typically 9W of saturated output power and 25 % of Power Added Efficiency.The typical power supply is 20V/240mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space qualified GaN-on-SiC HEMT process and is available in bare die form. It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
Attachments

AMPLIFIER – HPA