Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA7115-99F is a monolithic three-stage GaAs high power amplifier designed for X band applications.
This HPA provides typically 8W output power associated to 36% power added efficiency at 4dBcomp and a high robustness on mismatch load.
This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges.
It is available in chip form.
Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |