Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6710-FAB is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 35% of Power Added Efficiency.
It is dedicated to radar frequency band and Space downlink Ku Band communication.
The circuit is manufactured with a GaN pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is proposed in a RoHS leadless surface mount hermetic metal ceramic 6x6mm² package, compliant SMD assembly tools.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||