Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA.
This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |