Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |
The CHA6105-99F is a monolithic three-stage medium power amplifier designed for X band applications.
The driver provides typically 31.5dBm output power at saturation and is suitable for systems requiring a high compression level. Moreover it includes a biasing control circuit that makes Pout less sensitive to spread and chip environment.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
---|---|---|---|---|---|---|---|---|---|---|
min | max |