Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||