Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance.
It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems.
It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
ESD protection on DC/RF is included in the product.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||