Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA1077a98F is a W-band monolithic 3-stages Low Noise Amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly.
The circuit is manufactured on a pHEMT process: 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||