GH15 GaN technology is launched
- Foundry
UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris,
UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris,
Come see us and participate to the conferences
Next quarter, UMS foundry will give direct access via the website to the ‘Cadence Sign off’ Design Rules Check tool.
The CHKA011aSXA is a 130W unmatched packaged Gallium Nitride Transistor.
UMS participates to the 8th annual World Congress of Advanced Materials 2019 in Osaka, from the 22nd to the 24th of July 2019.
