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CHA6710-FAB, a new GaN 5W MPA in hermetic package

UMS is pursuing the development of its product range for space applications. The new CHA6710-FAB is a GaN based 5W X-Band (8 to 12.75GHz) Medium Power Amplifier in hermetic metal ceramic package.

It exhibits 35% of Power Added Efficiency and 22.5dB linear gain.

 

This circuit is designed on an UMS proprietary space evaluated 0.25µm GaN HEMT process.

 

The CHA6710-FAB is recommended for  applications such as X-band radar and space Ku-band communication systems.

 

This product can also be supplied as a bare die (CHA6710-99F).

 

Product features:

 

  • Frequency range: 8-12.75GHz
  • Linear gain: 22.5dB
  • Saturated Output power: 5W
  • Associated Power Added Efficiency: 35%
  • DC bias: 25V@ 0.2A
  • 6x6mm2 hermetic metal ceramic package
 - Product