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With the new UMS HPA, your projects will take off

CHA7452-99F a Q-Band GaN HPA


The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high  PAE of 24%, 29dB Linear Gain and low consumption of 290mA @ 20V.  With its low biaising voltage, the CHA7452-99F maintains a junction temperature below 160°C even in saturation

UMS new HPA, the CHA7452 PAE and Output power figure.


Proposed in a die form, the CHA7452-99F has been designed on a UMS proprietary 0.15µm GaN technology.



Its features makes it an ideal candidate for your Space SATCOM projects in Q-Band and for all demanding microwave applications.

Main features

■ Frequency range: 35.5 – 40.5 GHz

■ High output power: 9 W

■ High PAE: 24 %

■ Linear Gain: 29 dB

■ DC bias: Vd=20V @Id=290 mA

■ Chip size: 3.6×2.9 mm

■ Available in bare die form

 - Product