CHA7452-99F a Q-Band GaN HPA
The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high PAE of 24%, 29dB Linear Gain and low consumption of 290mA @ 20V. With its low biaising voltage, the CHA7452-99F maintains a junction temperature below 160°C even in saturation
Proposed in a die form, the CHA7452-99F has been designed on a UMS proprietary 0.15µm GaN technology.
Its features makes it an ideal candidate for your Space SATCOM projects in Q-Band and for all demanding microwave applications.
Main features
■ Frequency range: 35.5 – 40.5 GHz
■ High output power: 9 W
■ High PAE: 24 %
■ Linear Gain: 29 dB
■ DC bias: Vd=20V @Id=290 mA
■ Chip size: 3.6×2.9 mm
■ Available in bare die form