A good news never comes alone, please welcome our latest power transistor :
The CHK5010-99F, is designed on a GaN on SiC substrate.
This product comes with wide band capabilities up to 12GHz, it is highly suitable for RF power applications.
This product exhibits a PAE of 70% and Pout of 4W. It has 2 operating modes : Pulsed and CW, the chip is 0.90×0.80×0.1mm.
contact us at email@example.com if you want to learn more about the key characteristics, technical performance and applications.