Discover the new UMS HPA dedicated to space applications
The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA.
This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
Main Features :
■ 17.3-21.5GHz frequency range
■ Linear gain is 30 dB
■ Pout=36dBm for Pin=14dBm
■ NPR > 17dB for Pout = 2Watts
■ PAE=36% at Psat
■ DC bias: Vd=18Volts @ Idq=182mA
■ Chip size : 3.55mmx2.24mm