UMS announces that its 0.25µm GaN (GH25) Pathwave ADS PDKs is now supporting the new Electro-Thermal capability (ETH) offered with Pathwave ADS.
This new functionality is not only included on GH25 GaN PDK but also on UMS PPH15X-20 GaAs power pHEMT process PDK.
Designing packaged High Power Amplifier is a challenging task. GaAs & GaN devices concentrate high dissipated power on a very small area. Temperature rises according to the CW or pulsed conditions of use and the different materials constituting the package and assembly process used. In addition, the temperature inside the transistor impacts its properties and performance.
ADS’s Thermal simulation coupled with its Electrical simulation allows a full and complete analysis of the electro-thermal behaviour of the device and the optimisation of the MMIC inside its package. It is the appropriate design method to extract the best performance from the RF GaN devices.
Foundry customers can get the full electro-thermal simulation of their systems by specifying thermal parameters of their own assembly solution.
This provides an elegant method to simplify the calculation of the junction temperature which is a critical step of MMIC design assessment. Implementation of thermal data in our PDKs has been possible thanks to a strong partnership with Keysight experts and development teams.
For UMS, this partnership with Keysight is a key element which contributes to our foundry customers satisfaction through regular innovative upgrades of the MMIC design tools.