UMS is associated to the GREAT program (hiGh fRequency GAn elecTronics) supported by the French National Center for Scientific Research (CNRS) and Defence Innovation Agency (AID).
Thanks to this collaborative project involving major laboratories in the field of Gallium Nitride, UMS accelerates the development of RF GaN technologies addressing high efficiency, high power applications up to 100GHz. This program includes the evaluation of new GaN RF epitaxial material developed by SOITEC too.