A paper entitled “Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers” has been published in the IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Vol 26 in January 2016 by O. Axelsson, N. Rorsman and M. Thorsell from the department of Microtechnology and Nanoscience, Chalmers University of technology and N. Billstrom from Saab AB, Electronic Defence Systems
This study investigates recovery time of the gain of AlGaN/GaN HEMT based low noise amplifiers (LNA) after an input overdrive pulse. Three LNAs, fabricated on two commercial MMIC processes, including our GH25 technology and a Chalmers in-house process, were evaluated.