UMS is proud to announce that the GH15-10 MMIC GaN HEMT technology has successfully been space evaluated and is now part of the European Preferred Part list (EPPL) established by the European Space agency (ESA).
UMS is proud to announce that the GH15-10 MMIC GaN HEMT technology has successfully been space evaluated and is now part of the European Preferred Part list (EPPL) established by the European Space agency (ESA).
This GaN 0.15µm HEMT process is optimized for high power applications up to 40GHz with high PAE and good linearity performance. This technology is dedicated to HPAs, robust LNAs and switches design for wireless Telecom (PtP, 5G, FWR), Satcom, Radar and Broadband multipurpose applications.
The MMIC process open in foundry mode includes also precision MIM capacitors, inductors, air-bridges, metallic resistors, TaN resistors, high values TiWSi resistors, via-holes through the substrate and two metal layers for interconnection.
| Element | Typical value |
| Power density | 4.2 W/mm (3.5W/mm at 20V) |
| Vt | -3.2V |
| Idss | 1.2A/mm, |
| Ids+ | 1.4A/mm |
| Gm | 390mS/mm. |
| VdsDC | 25V (20V for Space) |
| Fmax | Above 100GHz |
| MIM density | 175pF/mm2 |
| Metallic resistors | 30 and 1000 Ohms/sq. |
| Via-holes | Available on 70µm substrate thickness. |
For your foundry projects, GH15 Design Kits are available on ADS from Keysight and MwO from Cadence-NI. They offer models of passive devices, non-linear scalable electro-thermal models and a 3D stack for EM simulation & DRC capability.
European Space Agency / European Space Components Information Exchange System - EPPL list: Link