News / Event

GaN power blocks for next generation SSPAs

UMS introduce a new range of bare die GaN power bars

 

  • High power
  • High efficiency
  • Wide band capability
  • Compatible with pulsed and CW operating modes

 

These devices can be optimised in systems according to specific requirements: PAE, power, robustness… To fine tune the overall performance, our ULRC technology, available in foundry mode, enables the design of needed matching elements.

UMS power bars are also available in hermetic, plastic or flange packages.

 

 

   

  

 

 

 
  CHK8015-99F CHK8101-99F  CHK9014-99F CHK9013-99F CHKA012-99F 
Nb of cells 4 2 8 8 8
Max freq (GHz) 18 6 13 7 4
Pout max (W) 16 20 55 85 140
PAE* 65%@9GHz 60%@6GHz 50%@12GHz 69%@5GHz 65%@3GHz
Technology GH25 GH50 GH25 GH25 GH50
Dimension (mm) 0.88x2x0.1 1.05×1.55×0.1 0.88×4.27×0.1 0.9×4.27×0.1 1×4.84×0.1
  • Achieved on demo board

 

 

These devices can be optimised in systems according to specific requirements: PAE, power, robustness… To fine tune the overall performance, our ULRC technology, available in foundry mode, enables the design of needed matching elements.

 

UMS power bars are also available in hermetic, plastic or flange packages.

 

 

 

 - Product