The CHZ015A-QEG is a GaN 15W L-Band (1.2-1.4GHz) input matched packaged transistor. It is based on Quasi-MMIC technology.
The circuit operates in pulsed mode and features an output power of 18W with more than 13dB associated gain and a high PAE, up to 55%.
It allows broadband solutions for a variety of RF power applications in L-band. This circuit is particularly well suited for pulsed radar applications.
The CHZ015A-QEG is manufactured on a 0.5µm gate length GaN HEMT process. It is supplied in a low cost SMD package 24L-QFN 4×5.
Main features:
| Frequency range: | 1.2-1.4GHz |
| Small signal gain: | 19.5dB |
| Power: | >15W |
| Associated gain: | >13dB |
| PAE: | Up to 55% |
| Saturated drain current: | 650mA |
| DC bias: | VDS 45V @ ID_Q 100mA |