The CHA8352-99F is a 20W output power GaN High Power Amplifier.
This circuit features an excellent PAE of more than 42% in the 10.7-12.75GHz frequency band.
It exhibits a linear gain of 25dB, with a low consumption of 0.5A at 20V and remarkable return losses.
Well suited for Space applications, the CHA8352-99F covers also a wide range of microwave applications and systems.
This circuit is designed on a UMS proprietary 0.15µm gate length GaN HEMT process. It is supplied in bare die.
- Frequency range: 10.7-12.75GHz
- Linear Gain: 25dB
- Pout: 43dBm Pout @ 23dBm Pin
- PAE: >42% for all the frequencies
- RL: >17dB
- DC bias: 0.5A @ 20V
- Chip size : 5.3 x 3.5 x 0.07mm