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CHA8352-99F a balanced GaN HPA for Ku downlink SATCOM .

The CHA8352-99F is a 20W output power GaN High Power Amplifier.


This circuit features an excellent PAE of more than 42% in  the 10.7-12.75GHz frequency band.

It exhibits a linear gain of 25dB, with a low consumption of 0.5A at 20V and remarkable return losses.





Well suited for Space applications, the CHA8352-99F covers also a wide range of microwave applications and systems.

This circuit is designed on a UMS proprietary 0.15µm gate length GaN HEMT process. It is supplied in bare die.

Main features:

  • Frequency range: 10.7-12.75GHz
  • Linear Gain: 25dB
  • Pout: 43dBm Pout @ 23dBm Pin
  • PAE: >42% for all the frequencies
  • RL: >17dB
  • DC bias: 0.5A @ 20V
  • Chip size : 5.3 x 3.5 x 0.07mm
 - Product