The CHA8212-99F is a 8.5-11.5GHz 25W output power X-Band High Power Amplifier.
It features a 44dBm Pout with a high PAE of 36% at Psat (@Pin=20dBm). This circuit is supplied in bare die.
The CHA8212-99F is dedicated to defence applications and a wide range of microwave applications and systems.
This circuit is manufactured on a UMS proprietary 0.25µm gate length GaN pHEMT process.
- Frequency range: 8.5-11.5GHz
- Linear Gain: 34dB over 3 stage
- Pout: 44dBm Pout @ 20dBm Pin
- PAE: 36% PAE @ 20dBm Pin
- DC bias: 28V @ 0.84A
- Bare die product