The CHA8312-99F exhibits 17W output power with a high PAE of 50%.
This 8-12GHz High Power Amplifier features also an excellent linear gain of 26dB.
![CHA8312-99F Linear Gain versus Frequency](https://www.ums-rf.com/wp-content/uploads/2021/11/CHA8312-99F-1-300x211.jpg)
![Ouput Power Versus frequency](https://www.ums-rf.com/wp-content/uploads/2021/11/CHA8312-99F1-1-300x220.jpg)
One other asset of this circuit is that it is an excellent solution for numerous applications such as Defence, radar, test equipment and communication.
It is designed on a 0.15µm GaN HEMT proprietary technology.
![CHA8312-99F PAE versus Frequency](https://www.ums-rf.com/wp-content/uploads/2021/11/CHA8312-99F2-1-300x225.jpg)
![AM-PM versus Input Power](https://www.ums-rf.com/wp-content/uploads/2021/11/CHA8312-99F3-300x219.jpg)
Main characteristics:
- Frequency range: 8-12GHz
- PAE: > 50% @ 23dBm Input Power
- Linear Gain: 26dB
- Pout: 42.5dBm @ 23dBm Input Power
- Return losses: Input RL >17dB
Output RL >11dB - DC bias: 20V@320mA
- Chip size: 3.99mmx3.12mmx0.07mm