On the 1st of November, UMS will participate to the UK’s annual RF & Microwave Design Seminar organized by Interlligent in the Moller Center, Cambridge.
During this seminar, UMS will present a paper entitled “Packaged mmWave GaN, GaAs and Si ICs for 5G and automotive radar”
Abstract:
The global trend of heterogeneous integration is clearly emerging in RF and millimeter wave solutions in very different domains of applications. Continuous trend for integration requires at a certain level the use of different technologies like GaN, GaAs or Si based for many reasons: multi-functionality, optimized performance, low cost packaging, time to market, volume flexibility. This presentation presents some examples of such multi-technology integration in high volume domains such as radar sensors used in automotive or other applications, 5G FE solutions for 24 to 30 GHz bands integrating LNA and PA with improved drain efficiency or linearity, and also for defense products at lower frequencies. The different challenges induced by this increasing complexity are also discussed, from the technologies selection and design phases, up to evaluation by customers and test in volume optimization