UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space agency (ESA) (1).
The reliability study and ESCC evaluation of the technology have been supported by ESA, French MoD and CNES.
This GaN 0.25µm HEMT process is optimized for high power applications up to 20GHz. Its good HEMT noise performance also allows LNA design.
The MMIC process includes, precision TaN resistors, high values TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.
For your foundry projects, GH25 Design Kits are available on ADS from Keysight and MwO from NI-AWR. They offer non linear scalable electro-thermal models and a 3D stack for EM simulation & DRC capability.
(1) European Space Agency / European Space Components Information Exchange System –
Link to the EPPL list
Element Typical value:
| Power density: | 4.5W/mm |
| Vt: | -3.5V |
| Idss: | 0.86A/mm |
| Ids+: | 1A/mm |
| Gm: | 290mS/mm |
| Vbds: | >100 Volts |
| VdsDC: | 30V |
| Ft: | 30GHz |
| Fmax: | Above 50GHz |
| MIM density: | 255pF/mm2 |
| Metallic resistors: | 30 and 1000 Ohms/sq. |
| Via-holes: | Available on 100µm substrate thickness |
| Wafer size Thickness: | 100µm / Diameter: 100mm |