New
CHA6224-98F - 20 – 40 GHz 2 Watt GaN Power Amplifier
Gain (dB)
21
Sat. Output Power (dBm)
33
Bias (mA)
550
Bias (V)
15
RF Bandwidth (GHz) Max
40
RF Bandwidth (GHz) Min
20
Market
23-26GHz Chipset
CHA6224-98F is a three-stage wideband power amplifier operating between 20 and 40GHz. The amplifier provides typically 2W saturated output power and 21dB linear gain. The integration of an on-chip RF ESD inductor further enhances device robustness and reliability under demanding operation conditions.
With its compact footprint and excellent RF performance, this amplifier delivers optimized mmWave power solutions to meet the stringent requirements of next-generation Satcom, 5G infrastructure, Test instrumentation and broadband electronic warfare systems.
The circuit is manufactured on a robust 0.1µm HEMT GaN-on-SiC process with top layer mechanical protection. Input and Output are 50Ω matched.
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