UMS Unveils New GH10-10, 0.1-µm GaN Technology

A breakthrough in RF and Millimeter-Wave applications

United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now fully qualified and already opened in production mode, empowering our customers with high performance, fast time-to-market and greater competitive advantages.

Recognized as a European supplier leader for innovative GaAs and GaN processes, UMS serves leading industries including defense, aerospace, telecommunications, automotive, and industrial markets. Driving innovation forward, UMS sets new standards in performance with GH10-10 for low-noise, RF switches and High-Power Amplifiers (HPA) MMIC solutions with unmatched efficiency.

Driving innovation forward, UMS sets new standards in performance with GH10-10 for low-noise, RF switches and High-Power Amplifiers (HPA) MMIC solutions with unmatched efficiency.

“GH10-10 represents a major leap forward in our technology roadmap, enabling high frequency operation beyond V band with a good device robustness. By integrating GH10-10 technology into market, our GaN platform reaches new levels of performance and capability, empowering more advanced and competitive solutions to push the boundaries of RF and mm-wave performance.” (Valeria Di Giacomo-Brunel, Head of UMS Product Soluctions & Foundry Services)