Advanced Information
At UMS, we constantly innovate and propose new solutions which anticipate evolving market requirements. In the frame of our development outcomes, we propose Advanced Informations, i.e. sneak previews into new circuits prior to their potential release as new products.
By getting an insight view on new and upcoming UMS technology, your projects will benefit from our latest developments and up-to-date designs.
To access our catalogue of released products, please consult our UMS Product Finder.
26.5-31GHz 20W High Power Amplifier in drop-in copper base package (AI2515)
The CHA8362-EBB is a packaged three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 20W of saturated output power associated to 28% of Power Added Efficiency.
It exhibits 10W of linear power with -20dBc IMD3 at 10MHz bandwidth. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in a drop-in package with a copper base. Input & output are 50Ω matched.
26-40GHz Low Noise Amplifier (AI2514)
The CHA2362-99F is a wide band Low Noise Monolithic Amplifier which integrates three amplification stages that produces 22dB gain associated to 2dB noise figure.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process. It is available in chip form.
15 – 18GHz High Power Amplifier (AI2513)
The CHA8315-99F is a monolithic GaN High Power Amplifier operating in the frequency band 15 to 18 GHz and delivering an output power of 43.5dBm with an associated PAE of 45%.
It exhibits a 23dB small signal gain. The overall power supply is 20V/1.16A. The circuit is design for defence applications but offers performances suited for a wide range of microwave applications.
The part is manufactured on a robust GaN HEMT technology and is available as a die.
37.5 – 43.5GHz, 10W High Power Amplifier (AI2512)
The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and 43.5GHz and providing typically 10W of saturated output power and more than 24% of Power Added Efficiency. The typical power supply is 20V/540mA (quiescent current). Thanks to a low drain voltage biasing, the CHA8454-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space evaluated GaN-on-SiC HEMT process and is available in bare die form. It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
27.5 – 31GHz 10W Power Amplifier (AI2504)
The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 27dB. The overall power supply is 22V/300mA.
The circuit is dedicated to Satcom and is also well suited for a wide range of microwave and millimetre wave applications and systems.
It is developed on a robust GaN-on-SiC HEMT process and will be available as a bare die. The input and output are matched to 50Ω and integrate ESD RF protection.
17 – 21.5GHz Medium Power Amplifier (AI2414)
The CHA5282-QAG is a two-stage GaAs Medium Power Amplifier in the frequency band 17-21.5GHz. This MPA typically provides 25dBm output power associated to 44% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 18.5dB. The overall power supply is 5V/70mA. It is available in 3×3 plastic package.
The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.
It is developed on a robust pHEMT process. The input and output are matched to 50Ω and integrate ESD RF protection.
4.5 – 6.8GHz High Power Amplifier (AI2413)
The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band.
This HPA operates with a drain voltage from 14V to 24V.
Depending on the applied voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.
Designed for Radar application, it is also ideal for a wide range of microwave systems.
The product is developed on a robust GaN-on-SiC HEMT process and is available in a QFN plastic package.