Advanced Information
At UMS, we constantly innovate and propose new solutions which anticipate evolving market requirements. In the frame of our development outcomes, we propose Advanced Informations, i.e. sneak previews into new circuits prior to their potential release as new products.
By getting an insight view on new and upcoming UMS technology, your projects will benefit from our latest developments and up-to-date designs.
To access our catalogue of released products, please consult our UMS Product Finder.
CHA6224-98F: 20-40GHz 2W GaN Power Amplifier (AI2310)
The CHA6224-98F is a three-stage wideband power amplifier operating between 20 and 40GHz. The amplifier provides typically 2W saturated output power and 21dB linear gain. The integration of an on-chip RF ESD inductor further enhances device robustness and reliability under demanding operation conditions.
With its compact footprint and excellent RF performance, this amplifier delivers optimized mmWave power solutions to meet the stringent requirements of next-generation Satcom, 5G infrastructure, Test instrumentation and broadband electronic warfare systems.
The circuit is manufactured on a robust 0.1µm HEMT GaN-on-SiC process and is available in bare die form. Input and Output are 50Ω matched.
CHA1452-QDG: 30-44GHz Low Noise Amplifier (AI2409)
The CHA1452-QDG is a three-stage GaAs Low Noise Amplifier operating in the 30 – 44GHz frequency band including current regulation circuit on each stage. This LNA typically presents low Noise Figure of 1.75dB associated to a small signal Gain of 20dB.
It can provide up to 4dBm output power at 1dB gain compression and needs DC power supply of Vdd=3V and Vss=-3V corresponding to a current of 47mA. The current variation is lower than 2mA when the temperature varies from -40°C to 85°C thanks to the integrated regulation on each stage of the LNA. It is available in 4×4 plastic package.
Designed for space applications, it is also ideal for a wide range of microwave systems.
This new product is developed using GaAs pHEMT process and is provided on low cost SMD RoHS compliant QFN plastic package.
CHA2353-99F: 46-52GHz Low Noise Amplifier with Adjustable Gain Control (AI2503)
The CHA2353-99F is a three stage monolithic Low Noise Amplifier, producing 24dB linear gain with 30dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 46-52GHz. It includes ESD protections on each RF access and DC pads.
This amplifier is designed for a wide range of applications, from Commercial to Space communication systems.
It is manufactured with a pHEMT process, successfully evaluated for Space and is available in bare die.
CHA8682-98F: 25-29GHz 25W High Power Amplifier (AI2509)
The CHA8682-98F is a 3-stage high power amplifier operating between 25 and 29GHz and providing typically 25W of saturated output power associated to 28% of Power Added Efficiency at 25V drain voltage. It exhibits 8W of linear power with -25dBc IMD3.
This HPA is dedicated to 5G and SatCom applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form with mechanical protection. Input and output are 50Ω matched. The drain bias range, from 18V to 25V, offers a saturated output power from 15W to 25W.
CHA8362-EBB: 26.5-31GHz 20W High Power Amplifier in drop-in copper base package (AI2515)
The CHA8362-EBB is a packaged three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 20W of saturated output power associated to 28% of Power Added Efficiency.
It exhibits 10W of linear power with -20dBc IMD3 at 10MHz bandwidth. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in a drop-in package with a copper base. Input & output are 50Ω matched.
CHA8265-98F: 27.5-31GHz 25W High Power Amplifier (AI2519)
The CHA8265-98F is a 3-stage high power amplifier operating between 27.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of Power Added Efficiency at 25V drain voltage. It exhibits 10W of linear power with -25dBc IMD3. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form with mechanical protection.
Input and output are 50Ω matched. The drain bias range, from 18V to 25V, offers a saturated output power from 15W to 25W.
CHA2452-QAG: 31-43GHz LNA (AI2603)
The CHA2452-QAG is a two-stage GaAs Low Noise Amplifier operating in the 31 – 43GHz frequency band. This LNA typically presents low Noise Figure of 1.8dB associated to a small signal Gain of 24dB.
It can provide up to 8dBm output power at 1dB gain compression (could be increased with Vdd up to 5V) and needs DC power supply of Vdd=2.5V for a current of 28mA. It is available in 3×3 plastic package.
Designed for space applications, it is also ideal for a wide range of microwave systems.
This new product is developed using GaAs pHEMT process and is provided on low cost SMD RoHS compliant QFN plastic package.