Advanced Information
At UMS, we constantly innovate and propose new solutions which anticipate evolving market requirements. In the frame of our development outcomes, we propose Advanced Informations, i.e. sneak previews into new circuits prior to their potential release as new products.
By getting an insight view on new and upcoming UMS technology, your projects will benefit from our latest developments and up-to-date designs.
To access our catalogue of released products, please consult our UMS Product Finder.
CHA8682-98F: 25-29GHz 25W High Power Amplifier (AI2509)
The CHA8682-98F is a 3-stage high power amplifier operating between 25 and 29GHz and providing typically 25W of saturated output power associated to 28% of Power Added Efficiency at 25V drain voltage. It exhibits 8W of linear power with -25dBc IMD3.
This HPA is dedicated to 5G and SatCom applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form with mechanical protection. Input and output are 50Ω matched. The drain bias range, from 18V to 25V, offers a saturated output power from 15W to 25W.
CHA8362-EBB: 26.5-31GHz 20W High Power Amplifier in drop-in copper base package (AI2515)
The CHA8362-EBB is a packaged three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 20W of saturated output power associated to 28% of Power Added Efficiency.
It exhibits 10W of linear power with -20dBc IMD3 at 10MHz bandwidth. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in a drop-in package with a copper base. Input & output are 50Ω matched.
CHA8265-98F: 27.5-31GHz 25W High Power Amplifier (AI2519)
The CHA8265-98F is a 3-stage high power amplifier operating between 27.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of Power Added Efficiency at 25V drain voltage. It exhibits 10W of linear power with -25dBc IMD3. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form with mechanical protection.
Input and output are 50Ω matched. The drain bias range, from 18V to 25V, offers a saturated output power from 15W to 25W.