UMS to speak at ARMMS conference in November

UMS’ Samira Bouzid-Driad will be presenting her paper on “A 0.1um GaN-on-SiC technology: Qualification and perspectives at high frequencies” at the upcoming ARMMS RF & Microwave Society Conference at the Cambridge Belfry Cambourne (17 – 18 Nov 2025).

Extract: UMS has developed a new generation of GaN-on SiC technology identified as GH10-10. Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements were performed at 18 GHz, 30GHz, 45 GHz and 60 GHz. The results at 45 GHz have shown more than 46% of PAE, 11dB linear gain and 2.5W.mm-1 output power. At 60 GHz, a maximum PAE of 31-33% is obtained. The nonlinear electrical model accuracy is proven with the HPA designed at Q-Band and showing promising results.