CHKA012a99F - 140W Power Bar

Operating Frequency (GHz)

19 @ 3

Saturated Power (W)

140

Bias (mA)

650

Bias (V)

Glin (dB) @Freq (GHz)

19 @ 3

PAE (%) @Freq (GHz)

76 @ 3

Market

Aerospace, Defense and Instrumentation

The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry.