CHKA011aSXA - 130W Power Packaged Transistor
Operating Frequency (GHz)
Up to 1.5
Saturated Power (W)
130
Bias (mA)
640
Bias (V)
50
Glin (dB) @Freq (GHz)
23.5 @ 0.44
PAE (%) @Freq (GHz)
75 @ 0.5
Market
Aerospace, Defense and Instrumentation
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in ceramic metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
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